Interconnect structure including a conductive feature and a barrier layer on sidewalls and a bottom surface of the conductive feature and method of forming the same

ABSTRACT

An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a conductive plug over a substrate; a conductive feature over the conductive plug, wherein the conductive feature has a first sidewall, a second sidewall facing the first sidewall, and a bottom surface; and a carbon-containing barrier layer having a first portion along the first sidewall of the conductive feature, a second portion along the second sidewall of the conductive feature, and a third portion along the bottom surface of the conductive feature.

BACKGROUND

The fabrication of integrated chips can be broadly separated into twomain sections, front-end-of-the-line (FEOL) fabrication andback-end-of-the-line (BEOL) fabrication. FEOL fabrication includes theformation of devices (e.g., transistors, capacitors, resistors, etc.)within a semiconductor substrate. BEOL fabrication includes theformation of one or more metal interconnect layers comprised within oneor more insulating dielectric layers disposed above the semiconductorsubstrate. The metal interconnect layers of the BEOL electricallyconnect individual devices of the FEOL to external pins of an integratedchip.

As the size of a semiconductor device size decreases, there is a trendtowards thinner films being used for the diffusion barrier layer.Physical vapor deposition (PVD) process used for depositing a thinnerbarrier layer encounters difficulties in advanced scale ofinterconnection. Accordingly, a need has developed in the art for animproved method of forming an interconnect structure for an integratedchip.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isemphasized that, in accordance with the standard practice in theindustry, various features are not drawn to scale and are used forillustration purposes only. In fact, the dimensions of the variousfeatures may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a cross-sectional view of an interconnect structure 100according to various aspects of the present disclosure.

FIG. 2 is a cross-sectional view of an interconnect structure 200according to various aspects of the present disclosure.

FIG. 3 is a flowchart of a method 300 of forming the interconnectstructure 100 according to various aspects of the present disclosure.

FIGS. 4-10 are cross-sectional views of the interconnect structure 100at various stages of fabrication according to various aspects of thepresent disclosure.

DETAILED DESCRIPTION

The present disclosure relates generally to semiconductor structures,and more particularly, to methods of forming an interconnect structure.

It is understood that the following disclosure provides many differentembodiments, or examples, for implementing different features of variousembodiments. Specific examples of components and arrangements aredescribed below to simplify the present disclosure. These are, ofcourse, merely examples and are not intended to be limiting. Forexample, the formation of a first feature “over” or “on” a secondfeature in the description that follows may include embodiments in whichthe first and second features are formed in direct contact, and may alsoinclude embodiments in which additional features may be formed betweenthe first and second features, such that the first and second featuresmay not be in direct contact. In addition, the present disclosure mayrepeat reference numerals and/or letters in the various examples. Thisrepetition is for the purpose of simplicity and clarity and does not initself dictate a relationship between the various embodiments and/orconfigurations discussed.

Further, spatially relative terms, such as “beneath”, “below”, “under”,“lower”, “above”, “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. For example, if the device in the figures is turned over,elements described as being “below” or “beneath” other elements orfeatures would then be oriented “above” the other elements or features.Thus, the exemplary term “below” can encompass both an orientation ofabove and below. The apparatus may be otherwise oriented (rotated 90degrees or at other orientations) and the spatially relative descriptorsused herein may likewise be interpreted accordingly.

The claimed subject matter is now described with reference to thedrawings, wherein like reference numerals are generally used to refer tolike elements throughout. In the following description, for purposes ofexplanation, numerous specific details are set forth in order to providea thorough understanding of the claimed subject matter. It is evident,however, that the claimed subject matter may be practiced without thesespecific details. In other instances, structures and devices areillustrated in block diagram form in order to facilitate describing theclaimed subject matter. It will be appreciated that ‘layer’, as usedherein, contemplates a region, and does not necessarily comprise auniform thickness. For example, a layer is a region, such as an areacomprising arbitrary boundaries. For another example, a layer is aregion comprising at least some variation in thickness.

FIG. 1 is a cross-sectional view of an interconnect structure 100according to various aspects of the present disclosure. As depicted inFIG. 1, the interconnect structure 100 comprises a conductive plug 130over a substrate 110; a conductive feature 170 over the conductive plug130, wherein the conductive feature 170 has a first sidewall 170 a, asecond sidewall 170 b facing the first sidewall 170 a, and a bottomsurface 170 c; and a carbon-containing barrier layer 180 having a firstportion 180 a along the first sidewall 170 a of the conductive feature170, a second portion 180 b along the second sidewall 170 b of theconductive feature 170, and a third portion 180 c along the bottomsurface 170 c of the conductive feature 170. The interconnect structure100 may further comprise a lower dielectric layer 120 over the substrate110, an upper dielectric layer 190 over the lower dielectric layer 120,and an etch stop layer (ESL) 160 between the lower dielectric layer 120and the upper dielectric layer 190. One skilled in the art willrecognize that first sidewall 170 a and second sidewall 170 b areartifacts of the cross-sectional view of the figures. In an actualdevice, first sidewall 170 a and second sidewall 170 b are actuallyopposing portions of a single sidewall defined by a three-dimensionaldevice.

The substrate 110 may be a semiconductor substrate that includes anelementary semiconductor including silicon and/or germanium; a compoundsemiconductor including silicon carbide, gallium arsenic, galliumphosphide, indium phosphide, indium arsenide, and/or indium antimonide;an alloy semiconductor including SiGe, GaAsP, AlInAs, AlGaAs, GaInAs,GaInP, and/or GaInAsP; or combinations thereof. The alloy semiconductorsubstrate may have a gradient SiGe feature in which the Si and Gecomposition change from one ratio at one location to another ratio atanother location of the gradient SiGe feature. The alloy SiGe may beformed over a silicon substrate. The SiGe substrate may be strained.Furthermore, the substrate 110 may be a semiconductor on insulator(SOI). In some examples, the substrate 110 may include a doped epilayer. In other examples, the substrate 110 may include a multilayercompound semiconductor structure. Alternatively, the substrate 110 mayinclude a non-semiconductor material, such as a glass, fused quartz, orcalcium fluoride. In some embodiments, the substrate 110 includes adielectric layer. In some embodiments, the substrate 110 includes a gateelectrode.

In some embodiments, the conductive plug 130 comprises tungsten (W). Theconductive plug 130 may be surrounded by a plug barrier layer 150. Theplug barrier layer 150 comprises titanium (Ti) or titanium nitride(TiN). In some embodiments, the conductive feature 170 comprises copper(Cu), aluminum (Al), silver (Ag), gold (Au), or alloys thereof. Theconductive feature 170 may also comprise one or more cap layers (notshown) having a composition of the formula MxOyNz, where M is a metal, Ois oxygen, and N is nitrogen. Generally, the metal is selected from thegroup consisting of aluminum (Al), manganese (Mn), cobalt (Co), titanium(Ti), tantalum (Ta), tungsten (W), nickel (Ni), tin (Sn), magnesium(Mg), and combinations thereof. The conductive plug 130 or theconductive feature 170 may be formed by a process including, but notlimited to, atomic layer deposition (ALD), chemical vapor deposition(CVD), physical vapor deposition (PVD), sputtering, plating, orcombinations thereof.

In some embodiments, the carbon-containing barrier layer 180 is formedby ALD, CVD, or combinations thereof. In some embodiments, thecarbon-containing barrier layer 180 comprises a metal or a metalnitride. For example, the metal or the metal nitride comprises one ormore metal elements selected from tantalum (Ta), titanium (Ti),manganese (Mn), ruthenium (Ru), cobalt (Co), chromium (Cr), aluminum(Al), zirconium (Zr), hafnium (Hf), tin (Sn), molybdenum (Mo), orpalladium (Pd). In some embodiments, the carbon-containing barrier layer180 comprises tantalum nitride (TaN), and an atomic ratio of N dividedby Ta is from about 2.3 to about 2.6. When the ratio is lower than 2.3,adhesion of TaN to the upper dielectric layer 190 or the lowerdielectric layer 120 will degrade. When the ratio is higher 2.6,adhesion of TaN to the conductive feature 170 will degrade. In someembodiments, the precursors used in ALD or CVD to form thecarbon-containing barrier layer 180 contain carbon impurities. Forexample, the precursors may include(tert-amylimido)tris(dimethylamido)tantalum (“TAIMATA”),(tert-butylimido)tris(ethylmethylamido)tantalum (“TBTEMT”),tris(diethylamino)(tert-butylimido)tantalum (“TBTDMT”), pentakis(dimethylamino)tantalum (“PDMAT”), tetrakis(dimethylamino)titanium(“TDMAT”), bis(ethylcyclopentadienyl)Ruthenium (“Ru(EtCp)₂”),cyclopentadienyl-propylcyclopentadienylruthenium (“RuCp(i-PrCp)”),bis(methylcyclopentadienyl)ruthenium (“Ru(MeCp)₂”),tris(acetylacetonate)ruthenium (“Ru(acac)₃”), trirutheniumdodecacarbonyl (“Ru₃(CO)₁₂”), cobalt dicarbonyl cyclopentadiene(“CpCo(CO)₂”), or dicobalt hexacarbonyl tert-butylacetylene (“CCTBA”).The carbon-containing barrier layer 180 has a carbon concentration of atleast about 0.1 atomic percent (at %). The carbon impurities can helpadhesion of the carbon-containing barrier layer 180 to the upperdielectric layer 190 or the lower dielectric layer 120. In addition, thecarbon impurities can help prevent a conductive material in theconductive feature 170 from diffusing into the upper dielectric layer190 or the lower dielectric layer 120. In some embodiments, thecarbon-containing barrier layer 180 has a carbon concentration fromabout 0.1 at % to about 5 at %. For example, the carbon concentration isfrom 0.2 at % to 1 at %. If the carbon concentration is higher than 5 at%, it may cause the “effective” k value of the upper dielectric layer190 or the lower dielectric layer 120 become higher than expected.

As depicted above, in some embodiments, the carbon-containing barrierlayer 180 is formed by ALD, CVD, or combinations thereof. The depositionuniformity is well controlled. In some embodiments, a ratio of athickness of the first portion 180 a or the second portion 180 b dividedby a thickness of the third portion 180 c is from about 0.9 to about1.1. As mentioned above, the carbon-containing barrier layer 180 isformed by ALD, CVD, or combinations thereof. Because the depositionuniformity is good for ALD or CVD, the ratio of the sidewall thicknessdivided by the bottom thickness of the carbon-containing barrier layer180 can be maintained from 90% to 110%. For example, the ratio is 0.95.In some embodiments, the thickness of the first portion 180 a or thesecond portion 180 b is in a range from about 4.5 angstroms (Å) to about55 angstroms (Å). In some embodiments, the thickness of the thirdportion 180 c is in a range from about 5 angstroms (Å) to about 50angstroms (Å). In some embodiments, the conductive plug 130 comprises avoid 140, and the carbon-containing barrier layer 180 further comprisesa fourth portion 180 d surrounding and sealing the void 140.

As depicted above, in some embodiments, the interconnect structure 100further comprises the lower dielectric layer 120 over the substrate 110,the upper dielectric layer 190 over the lower dielectric layer 120, andthe ESL 160 between the lower dielectric layer 120 and the upperdielectric layer 190. A dielectric material of the lower dielectriclayer 120 or the upper dielectric layer 190 comprises an oxide, SiO₂,SiOCH, borophosphosilicate glass (BPSG), TEOS, spin-on glass (SOG),undoped silicate glass (USG), fluorinated silicate glass (FSG),high-density plasma (HDP) oxide, plasma-enhanced TEOS (PETEOS),fluorine-doped silicon oxide, carbon-doped silicon oxide, porous siliconoxide, porous carbon-doped silicon oxide, organic polymers, or siliconebased polymers. The dielectric material is associated with a dielectricconstant (k) less than 3.9. In some embodiments, k is between about 1.5and about 2.8. The lower dielectric layer 120 or the upper dielectriclayer 190 may be formed by ALD, CVD, PVD, or combinations thereof.

The ESL 160 is extended through by the conductive structure 170. Thematerial for the ESL 160 includes SiO, SiC, SiN, SiOC, SiON, SiCN, TiN,AlN, AlON, TEOS, hard black diamond (HBD), or the like. Alternatively,the ESL 160 may be formed by depositing and annealing a metal oxidematerial, which includes Hf, HfO₂, or Al. The ESL 160 may be formedusing a suitable process such as ALD, CVD, PVD, molecular beam epitaxy(MBE), spin-on, or combinations thereof. In some embodiments, the ESL160 has a thickness in a range from about 10 Å to about 300 Å.

The interconnect structures of the present disclosure are not limited tothe above-mentioned embodiments, and may have other differentembodiments. To simplify the description and for the convenience ofcomparison between each of the embodiments of the present disclosure,corresponding components in each of the following embodiments are markedwith the same numerals. For making it easier to compare the differencebetween the embodiments, the following description will detail thedissimilarities among different embodiments and the identical featureswill not be redundantly described.

FIG. 2 is a cross-sectional view of an interconnect structure 200according to various aspects of the present disclosure. As depicted inFIG. 2, the interconnect structure 200 comprises a tungsten (W) plug 230having a seam 240 over a substrate 110; a copper (Cu) line 270 over theW plug 230, wherein the Cu line 270 has a first sidewall 270 a, a secondsidewall 270 b facing the first sidewall 270 a, and a bottom surface 270c; and a carbon-containing barrier layer 180 having a first portion 180a along the first sidewall 270 a of the Cu line 270, a second portion180 b along the second sidewall 270 b of the Cu line 270, a thirdportion 180 c along the bottom surface 270 c of the Cu line 270, and afourth portion 180 d surrounding and sealing the seam 240, wherein thecarbon-containing barrier layer 180 has a carbon concentration of atleast about 0.1 atomic percent (at %). The interconnect structure 200may further comprise a lower dielectric layer 120 over the substrate110, an upper dielectric layer 190 over the lower dielectric layer 120,and an etch stop layer (ESL) 160 between the lower dielectric layer 120and the upper dielectric layer 190.

The Cu line 270 may also comprise one or more cap layers (not shown)having a composition of the formula MxOyNz, where M is a metal, O isoxygen, and N is nitrogen. Generally, the metal is selected from thegroup consisting of Al, Mn, Co, Ti, Ta, W, Ni, Sn, Mg, and combinationsthereof. The W plug 230 or the Cu line 270 may be formed by a processincluding, but not limited to, ALD, CVD, PVD, sputtering, plating, orcombinations thereof. In some embodiments, the carbon-containing barrierlayer 180 further comprises a fourth portion 180 d surrounding andsealing the seam 240.

FIG. 3 is a flowchart of a method 300 of forming the interconnectstructure 100 according to various aspects of the present disclosure. Itis understood that additional steps can be provided before, during, andafter the method 300, and some of the steps described can be replaced oreliminated for other embodiments of the method 300. The method 300begins at step 310 in which a lower dielectric layer 120 is depositedover a substrate 110. The method 300 continues with step 320 in which aplug hole 122 is formed in the lower dielectric layer 120. The method300 continues with step 330 in which a conductive plug 130 is formed inthe plug hole 122. The method 300 continues with step 340 in which anupper dielectric layer 190 is deposited over the lower dielectric layer120. The method 300 continues with step 350 in which a trench 192 isformed in the upper dielectric layer 190 and the lower dielectric layer120 over the conductive plug 130. The method 300 continues with step 360in which a carbon-containing barrier layer 180 is formed along innersurfaces of the trench 192. The method 300 continues with step 370 inwhich a conductive feature 170 is formed in the trench 192. An etch stoplayer (ESL) 160 may be further formed between the lower dielectric layer120 and the upper dielectric layer 190. The discussion that followsillustrates embodiments of the interconnect structure 100 that can befabricated according to the method 300 of FIG. 3.

FIGS. 4-10 are cross-sectional views of the interconnect structure 100at various stages of fabrication according to various aspects of thepresent disclosure. As depicted in FIG. 4 and step 310 in FIG. 3, themethod 300 begins at step 310 by depositing a lower dielectric layer 120over a substrate 110. As depicted in FIG. 5 and step 320 in FIG. 3, themethod 300 continues with step 320 by forming a plug hole 122 in thelower dielectric layer 120. Step 320 may comprise using an etch process.For example, step 320 is performed by an anisotropic etch process (e.g.,dry etching).

As depicted in FIG. 6, FIG. 7, and step 330 in FIG. 3, the method 300continues with step 330 by forming a conductive plug 130 in the plughole 122. In some embodiments, a void 140 is formed in the conductiveplug 130. Step 330 comprises: forming a conductive film 125 in the plughole 122; and performing chemical-mechanical planarization (CMP) on atleast one of the lower dielectric layer 120 or the conductive film 125.The conductive film 125 may be formed by a process including, but notlimited to, ALD, CVD, PVD, sputtering, plating, or combinations thereof.In some embodiments, the conductive film 125 comprises W. In someembodiments, step 330 further comprises forming a plug barrier layer 150in the plug hole 122 before the forming the conductive film 125. Theplug barrier layer 150 comprises Ti or TiN.

As depicted in FIG. 8 and step 340 in FIG. 3, the method 300 continueswith step 340 by depositing an upper dielectric layer 190 over the lowerdielectric layer 120. The lower dielectric layer 120 or the upperdielectric layer 190 may be formed by ALD, CVD, PVD, or combinationsthereof. A dielectric material of the lower dielectric layer 120 or theupper dielectric layer 190 comprises an oxide, SiO₂, SiOCH, BPSG, TEOS,SOG, USG, FSG, HDP oxide, PETEOS, fluorine-doped silicon oxide,carbon-doped silicon oxide, porous silicon oxide, porous carbon-dopedsilicon oxide, organic polymers, or silicone based polymers. Thedielectric material is associated with a dielectric constant (k) lessthan 3.9. For example, k is between about 1.5 and about 2.8.

As depicted in FIG. 9 and step 350 in FIG. 3, the method 300 continueswith step 350 by forming a trench 192 in the upper dielectric layer 190and the lower dielectric layer 120 over the conductive plug 130. Step350 may comprise using an etch process. For example, step 350 isperformed by an anisotropic etch process (e.g., dry etching). In someembodiments, step 350 further comprises exposing an upper portion of thevoid 140.

The process steps up to this point have provided the interconnectstructure 100 having the trench 192 over the conductive plug 130.Conventionally, a barrier layer would be formed along inner surfaces ofthe trench 192 using PVD or sputtering. However, when a conductivematerial such as Cu is formed over the barrier layer later on, theconductive material may still diffuse into the conductive plug 130especially into the void 140, thereby degrading the device performance.

Accordingly, the processing discussed below with reference to FIG. 10may form a novel barrier layer along inner surfaces of the trench 192 toimpede diffusion of the conductive material into the conductive plug130. Problems associated with low yield and bad reliability may bereduced and/or avoided. Thus, Applicant's method may achieve the desireddevice performance characteristics.

As depicted in FIG. 10 and step 360 in FIG. 3, the method 300 continueswith step 360 by forming a carbon-containing barrier layer 180 alonginner surfaces of the trench 192. In some embodiments, step 360 furthercomprises forming the carbon-containing barrier layer 180 along innersurfaces of the void 140 and sealing the upper portion of the void 140.In some embodiments, step 360 is performed by ALD, CVD, or combinationsthereof. In some embodiments, the carbon-containing barrier layer 180comprises a metal or a metal nitride. For example, the metal or themetal nitride comprises one or more metal elements selected from Ta, Ti,Mn, Ru, Co, Cr, Al, Zr, Hf, Sn, Mo, or Pd. In some embodiments, thecarbon-containing barrier layer 180 comprises TaN, and an atomic ratioof N divided by Ta is from about 2.3 to about 2.6. In some embodiments,the precursors used in ALD or CVD to form the carbon-containing barrierlayer 180 contain carbon impurities. For example, the precursors mayinclude (tert-amylimido)tris(dimethylamido)tantalum(“TAIMATA”),(tert-butylimido)tris(ethylmethylamido)tantalum(“TBTEMT”),tris(diethylamino)(tert-butylimido)tantalum (“TBTDMT”),pentakis(dimethylamino)tantalum (“PDMAT”),tetrakis(dimethylamino)titanium (“TDMAT”),bis(ethylcyclopentadienyl)Ruthenium (“Ru(EtCp)₂”),cyclopentadienyl-propylcyclopentadienylruthenium (“RuCp(i-PrCp)”),bis(methylcyclopentadienyl)ruthenium (“Ru(MeCp)₂”),tris(acetylacetonate)ruthenium (“Ru(acac)₃”), trirutheniumdodecacarbonyl (“Ru₃(CO)₁₂”), cobalt dicarbonyl cyclopentadiene(“CpCo(CO)₂”), or dicobalt hexacarbonyl tert-butylacetylene (“CCTBA”).The carbon-containing barrier layer 180 has a carbon concentration of atleast about 0.1 atomic percent (at %). In some embodiments, thecarbon-containing barrier layer 180 has a carbon concentration fromabout 0.1 at % to about 5 at %. For example, the carbon concentration isfrom 0.2 at % to 1 at %. Carbon impurities would not be found in onebarrier layer formed by a conventional approach (such as PVD orsputtering) other than ALD or CVD.

As depicted in FIG. 1 and step 370 in FIG. 3, the method 300 continueswith step 370 by forming a conductive feature 170 in the trench 192. Theconductive feature 170 may be formed by a process including, but notlimited to, ALD, CVD, PVD, sputtering, plating, or combinations thereof.The conductive feature 170 comprises Cu, Al, Ag, Au, or alloys thereof.The conductive feature 170 may also comprise one or more cap layers (notshown) having a composition of the formula MxOyNz, where M is a metal, Ois oxygen, and N is nitrogen. Generally, the metal is selected from thegroup consisting of Al, Mn, Co, Ti, Ta, W, Ni, Sn, Mg, and combinationsthereof.

As depicted in FIG. 1, in some embodiments, the method 300 furthercomprises forming an etch stop layer (ESL) 160 between the lowerdielectric layer 120 and the upper dielectric layer 190. The ESL 160 maybe formed using a suitable process such as ALD, CVD, PVD, MBE, spin-on,or combinations thereof. The material for the ESL 160 includes SiO, SiC,SiN, SiOC, SiON, SiCN, TiN, AlN, AlON, TEOS, hard black diamond (HBD),or the like. Alternatively, the ESL 160 may be formed by depositing andannealing a metal oxide material, which includes Hf, HfO₂, or Al. Insome embodiments, the ESL 160 has a thickness in a range from about 10 Åto about 300 Å. The ESL 160 is extended through by the conductivestructure 170.

The methods of the present disclosure are not limited to be used by aplanar device on the substrate and can be applied to a non-planar deviceas well, such as a fin-like field effect transistor (FinFET) or ananowire device. Based on the discussions above, it can be seen that byusing the methods of the present disclosure, diffusion of the conductivematerial (of the conductive feature) into the conductive plug is impededby forming a carbon-containing barrier layer along inner surfaces of thetrench. The thickness of the carbon-containing barrier layer issubstantially conformal along the sidewalls and the bottom surface ofthe conductive feature. Especially when a void is formed in theconductive plug, the carbon-containing barrier layer is configured tosurround and seal the void to prevent the conductive material (of theconductive feature) from filling the void. As a result, the yield andreliability of the device can be well controlled by using the methods ofthe present disclosure.

One of the broader forms of the present disclosure involves aninterconnect structure. The interconnect structure comprises aconductive plug over a substrate; a conductive feature over theconductive plug, wherein the conductive feature has a first sidewall, asecond sidewall facing the first sidewall, and a bottom surface; and acarbon-containing barrier layer having a first portion along the firstsidewall of the conductive feature, a second portion along the secondsidewall of the conductive feature, and a third portion along the bottomsurface of the conductive feature.

Another of the broader forms of the present disclosure involves aninterconnect structure. The interconnect structure comprises a tungsten(W) plug having a seam over a substrate; a copper (Cu) line over the Wplug, wherein the Cu line has a first sidewall, a second sidewall facingthe first sidewall, and a bottom surface; and a carbon-containingbarrier layer having a first portion along the first sidewall of the Culine, a second portion along the second sidewall of the Cu line, a thirdportion along the bottom surface of the Cu line, and a fourth portionsurrounding and sealing the seam, wherein the carbon-containing barrierlayer has a carbon concentration of at least about 0.1 atomic percent(at %).

Still another of the broader forms of the present disclosure involves amethod of forming an interconnect structure. The method comprisesdepositing a lower dielectric layer over a substrate; forming a plughole in the lower dielectric layer; forming a conductive plug in theplug hole; depositing an upper dielectric layer over the lowerdielectric layer; forming a trench in the upper dielectric layer and thelower dielectric layer over the conductive plug; forming acarbon-containing barrier layer along inner surfaces of the trench; andforming a conductive feature in the trench.

The foregoing has outlined features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. An interconnect structure, comprising: aconductive plug over a substrate, wherein the conductive plug comprisesa void; a conductive feature over the conductive plug, wherein theconductive feature has a first sidewall, a second sidewall facing thefirst sidewall, and a bottom surface; and a carbon-containing barrierlayer having a first portion along the first sidewall of the conductivefeature, a second portion along the second sidewall of the conductivefeature, and a third portion along the bottom surface of the conductivefeature, wherein the carbon-containing barrier layer further comprises afourth portion lining and sealing the void, wherein the fourth portionof the carbon-containing barrier layer lining and sealing the voidcomprises a same material composition as the first portion of thecarbon-containing barrier layer along the first sidewall of theconductive feature, wherein the carbon-containing barrier layer is acontinuous layer, wherein at least a portion of the void remainsunfilled by the carbon-containing barrier layer.
 2. The interconnectstructure of claim 1, wherein the conductive plug comprises tungsten(W).
 3. The interconnect structure of claim 1, wherein the conductivefeature comprises copper (Cu), aluminum (Al), silver (Ag), gold (Au), oralloys thereof.
 4. The interconnect structure of claim 1, wherein thecarbon-containing barrier layer is formed by atomic layer deposition(ALD), chemical vapor deposition (CVD), or combinations thereof.
 5. Theinterconnect structure of claim 1, wherein the carbon-containing barrierlayer comprises a metal or a metal nitride.
 6. The interconnectstructure of claim 5, wherein the metal or the metal nitride comprisesone or more metal elements selected from tantalum (Ta), titanium (Ti),manganese (Mn), ruthenium (Ru), cobalt (Co), chromium (Cr), aluminum(Al), zirconium (Zr), hafnium (Hf), tin (Sn), molybdenum (Mo), orpalladium (Pd).
 7. The interconnect structure of claim 1, wherein thecarbon-containing barrier layer comprises tantalum nitride (TaN), andwherein an atomic ratio of N divided by Ta is from about 2.3 to about2.6.
 8. The interconnect structure of claim 1, wherein thecarbon-containing barrier layer has a carbon concentration from about0.1 atomic percent (at %) to about 5 atomic percent (at %).
 9. Theinterconnect structure of claim 1, wherein a ratio of a thickness of thefirst portion or the second portion divided by a thickness of the thirdportion is from about 0.9 to about 1.1.
 10. The interconnect structureof claim 9, wherein the thickness of the first portion or the secondportion is in a range from about 4.5 angstroms (Å) to about 55 angstroms(Å).
 11. The interconnect structure of claim 9, wherein the thickness ofthe third portion is in a range from about 5 angstroms (Å) to about 50angstroms (Å).
 12. An interconnect structure, comprising: a tungsten (W)plug having a seam over a substrate; a copper (Cu) line over the W plug,wherein the Cu line has a first sidewall, a second sidewall facing thefirst sidewall, and a bottom surface; and a carbon-containing barrierlayer having a first portion along the first sidewall of the Cu line, asecond portion along the second sidewall of the Cu line, a third portionalong the bottom surface of the Cu line, and a fourth portion lining andsealing the seam, the carbon-containing barrier layer being a continuousbarrier layer from the first sidewall of the Cu line to inside the seam,wherein the fourth portion has a first void lining portion having afirst surface and a second void lining portion having a second surface,the first surface and the second surface facing each other, the firstsurface being spaced apart from the second surface, wherein thecarbon-containing barrier layer has a carbon concentration of at leastabout 0.1 atomic percent (at %).
 13. The interconnect structure of claim12, wherein the carbon-containing barrier layer comprises a metal or ametal nitride.
 14. The interconnect structure of claim 13, wherein themetal or the metal nitride comprises one or more metal elements selectedfrom tantalum (Ta), titanium (Ti), manganese (Mn), ruthenium (Ru),cobalt (Co), chromium (Cr), aluminum (Al), zirconium (Zr), hafnium (Hf),tin (Sn), molybdenum (Mo), or palladium (Pd).
 15. The interconnectstructure of claim 12, wherein the carbon-containing barrier layercomprises tantalum nitride (TaN), and wherein an atomic ratio of Ndivided by Ta is from about 2.3 to about 2.6.
 16. The interconnectstructure of claim 12, wherein the carbon concentration is from about0.1 atomic percent (at %) to about 5 atomic percent (at %).
 17. Theinterconnect structure of claim 12, wherein a ratio of a thickness ofthe first portion or the second portion divided by a thickness of thethird portion is from about 0.9 to about 1.1.
 18. A structurecomprising: a conductive plug in a first dielectric layer over asubstrate, the conductive plug having a first width, the conductive plugcomprising a void or a seam; a first barrier layer surrounding theconductive plug, the first barrier layer being between the conductiveplug and the first dielectric layer; an etch stop layer over the firstdielectric layer; a conductive feature in a second dielectric layer overthe conductive plug, the conductive feature having a second width, thesecond width being larger than the first width, the conductive featureextending through the etch stop layer and partially into the firstdielectric layer; and a second barrier layer surrounding the conductivefeature, the second barrier layer comprising carbon, the second barrierlayer being between the conductive feature and the second dielectriclayer, the etch stop layer, and the first dielectric layer, the secondbarrier layer lining and sealing the void or the seam in the conductiveplug, the second barrier layer comprising a single continuous layerextending along opposite sidewalls of the void or the seam, the secondbarrier layer only partially filling the void or the seam.
 19. Thestructure of claim 18, wherein the second barrier layer has a carbonconcentration of at least about 0.1 atomic percent (at %), wherein thesecond barrier layer further comprises a metal or a metal nitride, themetal or the metal nitride comprising one or more metal elementsselected from tantalum (Ta), titanium (Ti), manganese (Mn), ruthenium(Ru), cobalt (Co), chromium (Cr), aluminum (Al), zirconium (Zr), hafnium(Hf), tin (Sn), molybdenum (Mo), or palladium (Pd).
 20. The structure ofclaim 18, wherein the second barrier layer is a continuous barrier layerfrom a sidewall of the conductive feature to inside the void or theseam.